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Variability and endurance dilemma in the TiO x /Al 2 O 3 RRAM. (a

Variability and endurance dilemma in the TiO x /Al 2 O 3 RRAM. (a

XPS depth profile of Al 2 O 3 /HfO 2 /Al 2 O 3 on TiN-coated Si by

Point Contact Resistive Switching Memory Based On, 44% OFF

A Novel Resistive Switching Identification Method through

The endurance and retention characteristics of the device units. a

Point Contact Resistive Switching Memory Based On, 44% OFF

Electronics, Free Full-Text

Variability and endurance dilemma in the TiO x /Al 2 O 3 RRAM. (a

Ratio-based multi-level resistive memory cells

Point Contact Resistive Switching Memory Based On, 44% OFF

Electronic synaptic plasticity and analog switching

a) Comparison of the 50 Â 50 nm 2 device and the sub-10 nm tip

Resistive random access memory: introduction to device mechanism

Study of Multi-level Characteristics for 3D Vertical Resistive

The schematic of 3D vertical RRAM array (VRRAM_2). The memory cell