Variability and endurance dilemma in the TiO x /Al 2 O 3 RRAM. (a
XPS depth profile of Al 2 O 3 /HfO 2 /Al 2 O 3 on TiN-coated Si by
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A Novel Resistive Switching Identification Method through
The endurance and retention characteristics of the device units. a
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Electronics, Free Full-Text
Variability and endurance dilemma in the TiO x /Al 2 O 3 RRAM. (a
Ratio-based multi-level resistive memory cells
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Electronic synaptic plasticity and analog switching
a) Comparison of the 50 Â 50 nm 2 device and the sub-10 nm tip
Resistive random access memory: introduction to device mechanism
Study of Multi-level Characteristics for 3D Vertical Resistive
The schematic of 3D vertical RRAM array (VRRAM_2). The memory cell